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STAM Awards

Congratulations! The Japan Prize Winner: Professor Hideo Hosono, Author of Science and Technology of Advanced Materials

Visit the journal's homepage here

The Japan Prize is awarded annually to scientists and engineers from around the world who have made significant contributions to the advancement of science and technology, thereby furthering the cause of peace and prosperity of mankind.

Each year, two fields of scientific endeavor are honored. This year, in the “Materials and Production” field, Dr. Hideo Hosono has been awarded the 2016 Japan Prize for his achievements in the “creation of unconventional inorganic materials with novel electronic functions based on nano-structure engineering”.

Over the years, Prof. Hosono has been a dedicated advisory board member to the journal Science and Technology of Advanced Materials (STAM). His colleagues from the STAM Board would like to express their heartfelt congratulations to Prof. Hosono.

Taylor & Francis also celebrates this achievement with Prof. Hosono and we are proud to present his work published in various Taylor & Francis journals. This collection features his latest review article on: ‘Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides’.

Read all about Prof. Hosono's research journey and dreams here.

Article TitleAuthorJournal
Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictidesHideo Hosono, Keiichi Tanabe, Eiji Takayama-Muromachi, Hiroshi Kageyama, Shoji Yamanaka, Hiroaki Kumakura, Minoru Nohara, Hidenori Hiramatsu & Satoru FujitsuScience and Technology of Advanced Materials
New functionalities in abundant element oxides: ubiquitous element strategyHideo Hosono, Katsuro Hayashi, Toshio Kamiya, Toshiyuki Atou & Tomofumi SusakiScience and Technology of Advanced Materials
Secondary electron emission and glow discharge properties of 12CaO·7Al2O3 electride for fluorescent lamp applicationsSatoru Watanabe, Toshinari Watanabe, Kazuhiro Ito, Naomichi Miyakawa, Setsuro Ito, Hideo Hosono & Shigeo MikoshibaScience and Technology of Advanced Materials
Present status of amorphous In–Ga–Zn–O thin-film transistorsToshio Kamiya, Kenji Nomura & Hideo HosonoScience and Technology of Advanced Materials
NANO-MATERIALS 2004: beyond traditional material disciplineHideo HosonoScience and Technology of Advanced Materials
Functioning of traditional ceramics 12CaO·7Al2O3 utilizing built-in nano-porous structureHideo HosonoScience and Technology of Advanced Materials
Atomic and electronic structures of Cu/a-Al2O3 interfaces prepared by pulsed-laser depositionTakeo Sasaki, Katsuyuki Matsunaga, Hiromichi Ohta, Hideo Hosono, Takahisa Yamamoto & Yuichi IkuharaScience and Technology of Advanced Materials
Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistorsTze‐Ching Fung, Chiao‐Shun Chuang, Kenji Nomura, Han‐Ping David Shieh, Hideo Hosono & Jerzy KanickiJournal of Information Display
Electrical properties and local structure of n-type conducting amorphous indium sulphideSatoru Narushima , Masanori Hiroki, Kazushige Ueda, Ken-Ichi Shimizu, Toshio Kamiya, Masahiro Hirano & Hideo HosonoPhilosophical Magazine Letters
Synthesis and properties of 12CaO · 7Al2O3 electride: review of single crystal and thin film growthSung Wng Kim & Hideo HosonoPhilosophical Magazine