Congratulations! The Japan Prize Winner: Professor Hideo Hosono, Author of Science and Technology of Advanced MaterialsBack to Awards page
The Japan Prize is awarded annually to scientists and engineers from around the world who have made significant contributions to the advancement of science and technology, thereby furthering the cause of peace and prosperity of mankind.
Each year, two fields of scientific endeavor are honored. This year, in the “Materials and Production” field, Dr. Hideo Hosono has been awarded the 2016 Japan Prize for his achievements in the “creation of unconventional inorganic materials with novel electronic functions based on nano-structure engineering”.
Over the years, Prof. Hosono has been a dedicated advisory board member to the journal Science and Technology of Advanced Materials (STAM). His colleagues from the STAM Board would like to express their heartfelt congratulations to Prof. Hosono.
Taylor & Francis also celebrates this achievement with Prof. Hosono and we are proud to present his work published in various Taylor & Francis journals. This collection features his latest review article on: ‘Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides’.
|Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides||Hideo Hosono, Keiichi Tanabe, Eiji Takayama-Muromachi, Hiroshi Kageyama, Shoji Yamanaka, Hiroaki Kumakura, Minoru Nohara, Hidenori Hiramatsu & Satoru Fujitsu||Science and Technology of Advanced Materials|
|New functionalities in abundant element oxides: ubiquitous element strategy||Hideo Hosono, Katsuro Hayashi, Toshio Kamiya, Toshiyuki Atou & Tomofumi Susaki||Science and Technology of Advanced Materials|
|Secondary electron emission and glow discharge properties of 12CaO·7Al2O3 electride for fluorescent lamp applications||Satoru Watanabe, Toshinari Watanabe, Kazuhiro Ito, Naomichi Miyakawa, Setsuro Ito, Hideo Hosono & Shigeo Mikoshiba||Science and Technology of Advanced Materials|
|Present status of amorphous In–Ga–Zn–O thin-film transistors||Toshio Kamiya, Kenji Nomura & Hideo Hosono||Science and Technology of Advanced Materials|
|NANO-MATERIALS 2004: beyond traditional material discipline||Hideo Hosono||Science and Technology of Advanced Materials|
|Functioning of traditional ceramics 12CaO·7Al2O3 utilizing built-in nano-porous structure||Hideo Hosono||Science and Technology of Advanced Materials|
|Atomic and electronic structures of Cu/a-Al2O3 interfaces prepared by pulsed-laser deposition||Takeo Sasaki, Katsuyuki Matsunaga, Hiromichi Ohta, Hideo Hosono, Takahisa Yamamoto & Yuichi Ikuhara||Science and Technology of Advanced Materials|
|Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors||Tze‐Ching Fung, Chiao‐Shun Chuang, Kenji Nomura, Han‐Ping David Shieh, Hideo Hosono & Jerzy Kanicki||Journal of Information Display|
|Electrical properties and local structure of n-type conducting amorphous indium sulphide||Satoru Narushima , Masanori Hiroki, Kazushige Ueda, Ken-Ichi Shimizu, Toshio Kamiya, Masahiro Hirano & Hideo Hosono||Philosophical Magazine Letters|
|Synthesis and properties of 12CaO · 7Al2O3 electride: review of single crystal and thin film growth||Sung Wng Kim & Hideo Hosono||Philosophical Magazine|